PART |
Description |
Maker |
CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp. Central Semiconductor Corp
|
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
Q62702-A3471 BAW78M |
From old datasheet system Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix Vishay Semiconductors
|
BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
RM600DY-66S RM600DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM900HC-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
BAV21A0 BAV20A0 BAV20R0 BAV21R0 |
High Voltage Switching Diode
|
Taiwan Semiconductor Company, Ltd
|